专利类型发明专利 |
申请类型暂无 |
申请方名称Dixon Sebastian , Kainth Jaspreet , Badcock Thomas James , Mcdonnell Liam , Wallis Robert |
发明人暂无 |
申请号WOEP23059679 |
公开号WO2023202944A1 |
国际申请20230413 WOEP23059679 |
申请日2023-04-13 00:00:00 |
主分类号C01B32/184 |
代理机构Boult Wade Tennant Llp |
代理人Boult Wade Tennant Llp |
公开日2023-10-26 00:00:00 |
优先权GB2205824 |
进入国家日暂无 |
国际公布日暂无 |
国际申请日暂无 |
地址7-8 West Newlands, Somersham Cambridgeshire PE28 3EB PE28 3EB GB |
检索词暂无 |
Claims : 1 . A method of forming a graphene-containing laminate, the method comprising : providing a first graphene layer structure on a substrate; forming a first metal oxide layer on the graphene layer structure by depositing and then oxidising a layer of metal; forming a second metal oxide layer on the first metal oxide layer; and forming a second graphene layer structure on the second metal oxide layer by CVD. 2. The method according to claim 1 , wherein the second metal oxide layer is formed by atomic layer deposition (ALD) or physical vapour deposition (PVD). 3. The method according to claim 2, wherein the second metal oxide layer is formed by ALD. 4. The method according to any preceding claim, wherein the first graphene layer structure is formed by CVD. 5. The method according to any preceding claim, wherein both steps of forming a first and second metal oxide layer are repeated on the second graphene layer structure. 6. The method according to any preceding claim, wherein the first and/or second metal oxide layer comprises aluminium oxide, hafnium oxide, yttrium oxide, zirconium oxide, yttria-stabilised zirconia, scandium oxide, cerium oxide, magnesium oxide, silicon oxide, gallium oxide or a mixture of two or more thereof, preferably aluminium oxide, hafnium oxide, yttrium oxide, zirconium oxide, cerium oxide, or a mixture of two or more thereof. 7. The method according to any preceding claim, wherein the step of oxidising the layer of deposited metal comprises heating the layer of metal under an oxygen-containing environment, preferably under an atmosphere substantially consisting of oxygen. 8. The method according to any preceding claim, wherein the step of oxidising the layer of deposited metal comprises heating the layer of metal over a hot-plate. 9. The method according to any preceding claim, wherein the metal is aluminium or hafnium, preferably aluminium. 10. The method according to any preceding claim, wherein the layer of metal has a thickness of less than 10 nm, preferably less than 5 nm. 11 . The method according to any preceding claim, wherein the second metal oxide layer has a thickness of at least 5 nm, preferably at least 10 nm, and/or has a thickness of less than 50 nm, preferably less than 30 nm. 12. The method according to any preceding claim, wherein a ratio of a thickness of the first metal oxide layer to a thickness of the second metal oxide layer is from 1 : 1 to 1 : 10, preferably from 1 : 2 to 1 : 5. 13. The method according to any preceding claim, wherein the second metal oxide layer is formed by ALD using water as an oxygen precursor. 14. The method according to any preceding claim, wherein the second metal oxide layer is formed by ALD using a metal alkyl, metal alkoxide or metal halide as a metal precursor. 15. The method according to any preceding claim, wherein the first metal oxide layer is formed through a mask to provide a patterned first metal oxide layer on the first graphene layer structure. 16. The method according to any preceding claim, further comprising a step of patterning the first graphene layer structure on the substrate after the step of forming the first metal oxide layer and before the step of forming the second metal oxide layer. 17. The method according to claim 16, wherein the step of patterning the first graphene layer structure comprises plasma etching any exposed portion of the first graphene layer structure. 18. A graphene-containing laminate comprising, in order : a substrate; a first graphene layer structure; a first layer of metal oxide, formed by oxidation of a layer of metal; a second layer of metal oxide; and a CVD-grown graphene layer structure grown directly on the second metal oxide layer. 19. The graphene-containing laminate according to claim 18, wherein the second layer of metal oxide is formed by ALD or PVD, preferably ALD. 20. The graphene-containing laminate according to claim 18 or claim 19, wherein the first graphene layer structure is grown by CVD directly on the substrate. 21. An electronic device comprising the graphene-containing laminate of any of claims 18 to 20.

